Title :
New findings of NBTI in partially depleted SOI transistors with ultra-thin gate dielectrics
Author :
Zhang, John ; Marathe, Amit ; Taylor, Kurt ; Zhao, Eugenc ; En, Arid Bill
Author_Institution :
Technol. Dev. Group, AMD, Sunnyvale, CA, USA
Abstract :
This work presents, for the first time, a comprehensive study of NBTI in partially depleted (PD) SOI PMOSFETs with gate dielectric thickness as small as ∼11Å for understanding of both general and SOI-specific NBTI mechanisms. Body tied (BT) transistors will be studied intensively to interpret their worse NBTI degradation than floating body (FB). NBTI self-healing will be also investigated.
Keywords :
MOSFET; semiconductor device breakdown; semiconductor device reliability; silicon-on-insulator; 11 Å; NBTI; NBTI self-healing; body tied transistors; degradation; floating body; gate dielectric thickness; partially depleted SOI transistors; ultra-thin gate dielectrics; Ambient intelligence; Degradation; Dielectrics; Failure analysis; Hot carriers; Niobium compounds; Stress; Temperature; Threshold voltage; Titanium compounds;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315452
