Title :
Studies and minimization of kink effect in SOI MOSFET devices with SELBOX structure
Author :
Narayanan, M.R. ; Al-Nashash, Hasan ; Mazhari, Baquer ; Pal, Dipankar
Author_Institution :
American Univ. of Sharjah, Sharjah, United Arab Emirates
Abstract :
This paper describes a method for reducing the kink effect observed in the I-V output characteristics of partially depleted SOI MOSFET. Selective back oxide structure with various gap lengths were used. Results obtained through numerical simulations show that kink can be significantly reduced while preserving the advantage of lower drain-body capacitance offered by conventional SOI structure.
Keywords :
MOSFET; minimisation; numerical analysis; silicon-on-insulator; SELBOX structure; SOI MOSFET devices; Si; current-voltage output characteristics; drain-body capacitance; kink effect; minimization; numerical simulations; selective back oxide; Capacitance; Doping; Heating; Impact ionization; MOSFET circuits; Microelectronics; Numerical simulation; Semiconductor process modeling; Silicon on insulator technology; Threshold voltage; Kink effect; SELBOX structure; SOI MOSFET; Self heating Effect;
Conference_Titel :
Microelectronics, 2008. ICM 2008. International Conference on
Conference_Location :
Sharjah
Print_ISBN :
978-1-4244-2369-9
Electronic_ISBN :
978-1-4244-2370-5
DOI :
10.1109/ICM.2008.5393502
