Title :
Mechanism for reduced NBTI effect under pulsed bias stress conditions
Author :
Zhu, B. ; Suehle, J.S. ; Bernstein, J.B.
Author_Institution :
Dept. of Mech. Eng., Maryland Univ., College Park, MD, USA
Abstract :
A series of experiments are conducted to study the physical mechanism of reduced NBTI effects observed under pulsed bias conditions. A reduction of Vth and Ion is observed for pulse periods shorter than critical time constants that are believed to be associated with hole trapping and detrapping processes. A two time constant model is developed to explain the reduction of Vth and Ion as a function of pulse repetition frequency.
Keywords :
MOSFET; annealing; hole traps; interface states; semiconductor device breakdown; semiconductor device reliability; critical time constants; hole detrapping processes; hole trapping; pulse repetition frequency; pulsed bias stress conditions; reduced NBTI effect; two time constant model; Annealing; Charge measurement; Current measurement; Educational institutions; Frequency; Niobium compounds; Stress measurement; Temperature; Titanium compounds; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315453
