Temperature dependence of propagation delay characteristic in FinFET circuits

Author

Soleimani, S. ; Afzali-Kusha, A. ; Forouzandeh, B.

Author_Institution

Sch. of Electr. & Comput. Eng., Univ. of Tehran, Tehran, Iran

fYear

2008

fDate

14-17 Dec. 2008

Firstpage

276

Lastpage

279

Abstract

In this paper, we investigate the temperature dependence of delay propagation characteristic of FinFET circuits. The study is performed on several digital circuits including inverter, NAND, NOR, XOR and full-adder implemented in a 32-nm FinFET technology. The results show that the speed of the FinFET circuits is enhanced when the temperature is increased. The temperature dependencies of the FinFET and MOSFET devices and circuits are also compared.

Keywords

MOSFET; NAND circuits; NOR circuits; adders; delay circuits; invertors; temperature; FinFET circuits; FinFET technology; MOSFET devices; NAND; NOR; XOR; delay propagation characteristic; digital circuits; full-adder; inverter; propagation delay characteristic; size 32 nm; temperature dependence; Digital circuits; FETs; FinFETs; Fluctuations; MOSFET circuits; Microelectronics; Propagation delay; Silicon on insulator technology; Temperature dependence; Threshold voltage; FinFET circuits; High temperature characteristic; supply voltage scaling; temperature variations;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2008. ICM 2008. International Conference on

Conference_Location

Sharjah

Print_ISBN

978-1-4244-2369-9

Electronic_ISBN

978-1-4244-2370-5

Type

conf

DOI

10.1109/ICM.2008.5393513

Filename

5393513