Converter Topologies and Power Semiconductors for Industrial Medium Voltage Converters

Author

Hiller, Marc ; Sommer, Rainer ; Beuermann, Max

Author_Institution

I DT LD, Siemens AG, Nuremberg

fYear

2008

fDate

5-9 Oct. 2008

Firstpage

1

Lastpage

8

Abstract

Today there are numerous different converter topologies and power semiconductor devices used in medium- voltage drive systems. This paper provides a general overview of the common converter topologies available on the market and their corresponding major characteristics. The different topologies are compared and evaluated with respect to their semiconductor effort. Due to the available power semiconductor devices with maximum blocking voltages of 6.5 kV, the drive market with power ratings up to 25 MW is dominated by voltage source inverters in IGBT as well as in IGCT technology. For higher power demands and special applications, thyristor converters are still frequently used.

Keywords

insulated gate bipolar transistors; power convertors; power semiconductor devices; IGBT; IGCT; converter topology; industrial medium voltage converter; power semiconductor device; voltage 6.5 kV; voltage source inverter; Circuit topology; Compressors; Insulated gate bipolar transistors; Inverters; Medium voltage; Milling machines; Power demand; Power semiconductor devices; Propulsion; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 2008. IAS '08. IEEE

Conference_Location

Edmonton, Alta.

ISSN

0197-2618

Print_ISBN

978-1-4244-2278-4

Electronic_ISBN

0197-2618

Type

conf

DOI

10.1109/08IAS.2008.308

Filename

4659096