DocumentCode :
3214987
Title :
Enhanced electron transfer rate for quantum dot sensitized solar cell based on CNT-TiO2 composite photoanode
Author :
Chen, Jiann-Jong ; Lei, W. ; Zhang, X.B.
Author_Institution :
Sch. of Electron. Sci. & Eng., Southeast Univ., Nanjing, China
fYear :
2010
fDate :
14-16 Oct. 2010
Firstpage :
365
Lastpage :
366
Abstract :
In this paper, fabrication and characterization of QDSSCs based on CNT doped TiO2 mesopores film were reported. The improved efficiency is obtained for the device using CNT/TiO2/CdSe as the photoanode. The QDSSCs based on bare TiO2 and CNT doped TiO2 were named as sample A and B.
Keywords :
II-VI semiconductors; anodes; cadmium compounds; carbon nanotubes; composite materials; doping; electrochemical electrodes; electron-hole recombination; semiconductor quantum dots; solar cells; surface roughness; titanium compounds; C-TiO2-CdSe; CNT doped TiO2 mesopores film; CNT-TiO2 composite photoanode; CNT-TiO2-CdSe photoanode; Enhanced electron transfer rate; TiO2; TiO2:C; quantum dot sensitized solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
Type :
conf
DOI :
10.1109/IVESC.2010.5644141
Filename :
5644141
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3214987
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