• DocumentCode
    3214987
  • Title

    Enhanced electron transfer rate for quantum dot sensitized solar cell based on CNT-TiO2 composite photoanode

  • Author

    Chen, Jiann-Jong ; Lei, W. ; Zhang, X.B.

  • Author_Institution
    Sch. of Electron. Sci. & Eng., Southeast Univ., Nanjing, China
  • fYear
    2010
  • fDate
    14-16 Oct. 2010
  • Firstpage
    365
  • Lastpage
    366
  • Abstract
    In this paper, fabrication and characterization of QDSSCs based on CNT doped TiO2 mesopores film were reported. The improved efficiency is obtained for the device using CNT/TiO2/CdSe as the photoanode. The QDSSCs based on bare TiO2 and CNT doped TiO2 were named as sample A and B.
  • Keywords
    II-VI semiconductors; anodes; cadmium compounds; carbon nanotubes; composite materials; doping; electrochemical electrodes; electron-hole recombination; semiconductor quantum dots; solar cells; surface roughness; titanium compounds; C-TiO2-CdSe; CNT doped TiO2 mesopores film; CNT-TiO2 composite photoanode; CNT-TiO2-CdSe photoanode; Enhanced electron transfer rate; TiO2; TiO2:C; quantum dot sensitized solar cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
  • Conference_Location
    Nanjing
  • Print_ISBN
    978-1-4244-6645-0
  • Type

    conf

  • DOI
    10.1109/IVESC.2010.5644141
  • Filename
    5644141
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3214987