DocumentCode
3215036
Title
Effects of hydrogen annealing on room temperature ferromagnetism and optical properties in Zn0.97 Cr0.03 O nanoparticles
Author
Liu-Niu Tong ; Huai-Bin Han ; Jin-Lian Hu ; Xian-Mei He
Author_Institution
Sch. of Mater. Sci. & Eng., Anhui Univ. of Technol., Ma-An-Shan, China
fYear
2010
fDate
14-16 Oct. 2010
Firstpage
623
Lastpage
624
Abstract
Diluted magnetic semiconductors (DMSs) such as transition metal TM-doped ZnO and TiO2 are attracting more and more attention due to their promising applications in spintronic devices. Ferromagnetism (FM) in these materials is often associated with ether free carriers or structural defects. Recently, it has been reported that codoping with hydrogen could be an effective way to tune the concentration of mobile carriers or defects and to enhance the FM in ZnO-based DMSs. However, the mechanisms about the effect of hydrogen treatment induced enhancement of FM in TM-doped ZnO system remains unclear. Some authors claim that ferromagnetic metal clusters can be easily reduced with hydrogen treatment and then contribute to the FM, while other authors suggest that the hydrogen can diffuses into the grain interior and causes more defects or defect complex in TM-doped ZnO which result in a larger saturation magnetization.
Keywords
II-VI semiconductors; annealing; chromium; ferromagnetic materials; magnetic particles; magnetisation; nanomagnetics; nanoparticles; photoluminescence; semiconductor doping; semimagnetic semiconductors; wide band gap semiconductors; zinc compounds; Zn0.97Cr0.03O; codoping; diluted magnetic semiconductors; hydrogen annealing; mobile carriers; nanoparticles; optical properties; photoluminescence; room temperature ferromagnetism; saturation magnetization; structural defects; temperature 293 K to 298 K; Atom optics; Atomic measurements; Educational institutions; Frequency modulation; Nanoscale devices; Optical devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location
Nanjing
Print_ISBN
978-1-4244-6645-0
Type
conf
DOI
10.1109/IVESC.2010.5644144
Filename
5644144
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