Diamond switches for high temperature electronics

Author

Loubriel, Guillermo M. ; Zutavern, Fred J. ; Ruebush, Mitchell H. ; Brown, Darwin J. ; O´Malley, M.W. ; Helgeson, Wesley D. ; Prasad, Rahul R. ; Tzonev, Ivon V. ; Gensler, Steven W. ; Qi, Niansheng ; Krishnan, Mahadevan

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

1

fYear

1997

fDate

27 Jul-1 Aug 1997

Firstpage

307

Abstract

This paper presents the results of switching voltages of 500 V and currents of 10 A using chemical vapor deposited (CVD) diamond as a switching material. The switching is performed by using an electron beam that penetrates the diamond, creates electron hole pairs, and lowers its resistivity to about 20 Ωcm and its resistance to about 4 Ω. Tests were performed at room temperature but in a configuration that allows for 250°C

Keywords

CVD coatings; diamond; electron beam applications; high-temperature techniques; switches; switchgear; switchgear testing; 10 A; 20 ohmcm; 250 C; 4 ohm; 500 V; CVD diamond switching material; circuit tests; electron beam; electron hole pairs; high-temperature electronics; Charge carriers; Chemical vapor deposition; Contacts; Electron beams; Laboratories; Performance evaluation; Silicon; Switches; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Engineering Conference, 1997. IECEC-97., Proceedings of the 32nd Intersociety

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-4515-0

Type

conf

DOI

10.1109/IECEC.1997.659204

Filename

659204