DocumentCode :
3215254
Title :
Magnetic property of ultrathin single crystal Fe3O4 film on InAs(100)
Author :
Huang, Z.C. ; Zhai, Yujia ; Xu, Yong Bing ; Wu, Junyong ; Thompson, S.M.
Author_Institution :
Dept. of Phys., Southeast Univ., Nanjing, China
fYear :
2010
fDate :
14-16 Oct. 2010
Firstpage :
609
Lastpage :
610
Abstract :
In this paper, the epitaxial growth and the magnetic property of different thickness of ultrathin Fe3O4 film on InAs(100) are reported. As-capped InAs(100) substrate is loaded to the ultrahigh vacuum (UHV) molecular beam epitaxy (MBE) deposition chamber, following an annealing at 600° C for 30 minutes before growth. Then an in situ reflectance high energy electron diffraction (RHEED) patterns of InAs (100) substrate is conducted along its [011] axis.
Keywords :
annealing; ferromagnetic materials; iron compounds; magnetic epitaxial layers; molecular beam epitaxial growth; reflection high energy electron diffraction; Fe3O4; InAs; InAs(100) substrate; MBE; RHEED; annealing; epitaxial growth; in situ reflectance high-energy electron diffraction; magnetic property; temperature 600 degC; time 30 min; ultrahigh vacuum molecular beam epitaxy; ultrathin film;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
Type :
conf
DOI :
10.1109/IVESC.2010.5644154
Filename :
5644154
Link To Document :
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