Current controlled magnetic AND/OR logic circuit

Logic gates are important as they are indispensable devices to all the electronic products. Controlling magnetization directly with an electric current rather than a magnetic field is one of the recent developments within spintronics. The magnetic logic operations are performed by domain wall propagation through ferromagnetic nanowire junctions, resulting in magnetization reversal. This domain wall propagation in the magnetic logic has been induced by an external applied field, which prevents the use of the voltage and current to control the logic operations. A potential alternative is current-induced dragging of a domain wall, which does not rely on a generated magnetic field. An AND/OR gate is a three-terminal device, made up of two input nanowires with constriction meeting at a junction region. The device is exposed by the electron beam with the SEM machine on a Si substrate. The logic function for a two-input gate is realized through the domain wall motion. To realize the OR function, critical current of the input constriction must be larger than that of the output constriction, this means that the constriction width of the input wire must be larger than that of the output wire. To realize the AND function, the width of both input constrictions must be smaller than that of output constrictions.