• DocumentCode
    3215374
  • Title

    A Novel Short-Circuit Detecting Scheme Using Turn-On Switching Characteristic of IGBT

  • Author

    Park, Byoung-Gun ; Lee, Jun-Bae ; Hyun, Dong-seok

  • fYear
    2008
  • fDate
    5-9 Oct. 2008
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    This paper represents a novel short-circuit detecting scheme using turn-on switching characteristic of IGBT. The proposed scheme has a simple protection circuit, fast fault detection time, and low-cost devices to protect IGBT under short-circuit faults such as fault under load (FUL) and hard switching fault (HSF). The proposed short-circuit detecting scheme using turn-on switching characteristic of IGBT can be integrated as a gate drive integrated circuit (IC) or high voltage integrated circuit (HVIC) because the proposed protection circuit supplements logic and low-voltage component. The feasibility of the proposed short-circuit detecting scheme is verified by simulation results.
  • Keywords
    driver circuits; fault location; insulated gate bipolar transistors; power bipolar transistors; power integrated circuits; switching; HVIC; IC; IGBT; fault detection time; gate drive integrated circuit; high voltage integrated circuit; low-cost devices; protection circuit; short-circuit detecting scheme; turn-on switching characteristics; Circuit faults; Electrical fault detection; Fault detection; Inductance; Insulated gate bipolar transistors; Protection; Regions; Roentgenium; Switching circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Society Annual Meeting, 2008. IAS '08. IEEE
  • Conference_Location
    Edmonton, Alta.
  • ISSN
    0197-2618
  • Print_ISBN
    978-1-4244-2278-4
  • Electronic_ISBN
    0197-2618
  • Type

    conf

  • DOI
    10.1109/08IAS.2008.350
  • Filename
    4659138