DocumentCode
3215404
Title
Analysis of Current Distribution in Parallel Semiconductors of High Current Rectifiers in Electro-Intensive Plants
Author
De Moraes, Edison Pires ; Kaiser, Walter
Author_Institution
ABB Ltda, Sao Paulo
fYear
2008
fDate
5-9 Oct. 2008
Firstpage
1
Lastpage
7
Abstract
Power ratings of rectifying equipment can greatly exceed the capability of single rectifying devices. Parallel combinations of devices or equipments are a common means to increase current rating. One must ensure that current is shared fairly evenly between semiconductors under normal and overload conditions. This paper presents an analysis of current distribution among parallel semiconductors based on real case measurements in high power rectifiers with simultaneous current acquisition in all legs and devices.
Keywords
current distribution; power plants; power semiconductor devices; rectifiers; current distribution; electro-intensive plants; high current rectifiers; high power rectifiers; parallel semiconductors; power semiconductor devices; Availability; Circuits; Current distribution; Current measurement; Electrochemical processes; Fuses; Inductance; Magnetic field measurement; Performance evaluation; Rectifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Society Annual Meeting, 2008. IAS '08. IEEE
Conference_Location
Edmonton, Alta.
ISSN
0197-2618
Print_ISBN
978-1-4244-2278-4
Electronic_ISBN
0197-2618
Type
conf
DOI
10.1109/08IAS.2008.352
Filename
4659140
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