DocumentCode
3215659
Title
A lift-off way to fabricate patterned aligned W18 O49 nanowire arrays with high field emission performances
Author
Fei Liu ; Mo, F.Y. ; Li, Luoqing ; Sun, Rui ; Chen, Z.S. ; Deng, S.Z. ; Xu, N.S.
Author_Institution
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
fYear
2010
fDate
14-16 Oct. 2010
Firstpage
650
Lastpage
651
Abstract
For the application of field emission (FE), W18O49 nanostructures have exhibited excellent FE behaviors among tungsten oxides, which promise a much better future. However, many difficulties remain to be overcome in their application in devices. One of them is that synthesis of nanostructures in uniform W18O49 phase is difficult; tungsten oxides have tens of different phases, which can results in their poor uniformity in their physical and chemical properties. Secondly, selected-area controlled growth of W18O49 nanowire arrays is another technical challenge. The last is that it is hard to find a simple and low-cost way to fabricate high yield of W18O49 nanowire arrays. The existence of these difficulties has held back their further development in device applications. Thus, creating a new and simple approach to synthesize patterned W18O49 nanostructures in vertically arrays is of crucial importance. Here, we report the selected-area growth of W18O49 nanowire on large-area pixel arrays by a simple lift-off way.
Keywords
field emission; nanofabrication; nanopatterning; nanowires; tungsten compounds; W18O49; field emission nanostructures; large-area pixel arrays; lift-off method; nanopatterning; patterned aligned nanowire arrays; selected-area controlled growth; tungsten oxides; Educational institutions; Resists; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location
Nanjing
Print_ISBN
978-1-4244-6645-0
Type
conf
DOI
10.1109/IVESC.2010.5644176
Filename
5644176
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