A Circuit-Level Analytical Study on Switching Behaviors of SiC Diode at Basic Cell for Power Converters

This paper presents a strategy for the analytic determination of the dynamic switching behaviors of the SiC Diode- Si MOSFET basic cell. The approach employs the semiconductor device electrical parameters from data sheets and static characteristic measurements and testing conditions to determine the behaviors of the basic cell. The presented equations can explain the phenomenon of basic cell such as SiC Diode negative current overshoot. A detailed analysis of the typical waveforms during switching is presented stage by stage. Furthermore, a 400V, 4A test bench has been built and tested under different testing conditions in order to determine the main effects. There is good agreement between theoretical analysis and experimental results.