Temperature and ultraviolet irradiation effect in BLT thin films

With the significant innovation and rapid development of the nonvolatile ferroelectric random access memory devices (FeRAMs), many efforts have been done to research and develop the ferroelectric films. Bismuth layer-structured ferroelectrics, such as lanthanum-doped bismuth titanate, have been paid a lot of attentions for their super properties. Temperature and ultraviolet irradiation, two of the important factors which can affect the properties of films, have been attracted much attention. In this paper, we mainly investigated the annealing temperature and the ultraviolet irradiation effect on the ferroelectric properties of Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films.