Title :
Property Study of aluminium oxide thin films by thermal annealing
Author :
Zhao, Z.W. ; Tay, B.K.
Author_Institution :
Sch. of Electron. Sci. & Eng., Southeast Univ., Nanjing, China
Abstract :
In this work, filtered cathodic vacuum arc (FCVA) has been used to form aluminium oxide thin films, which is a promising method not only due to the characteristics of high ionization ratio and high ion energy (50 eV ~ 150 eV) but also the effective removing of the macroparticles and therefore resulting in high quality films. The films were grown on Si (100) and quartz substrates at room temperature and film crystallinity was studied by XRD.
Keywords :
X-ray diffraction; aluminium compounds; annealing; refractive index; thin films; vacuum deposition; Al2O3; Si; Si (100) substrates; XRD; aluminium oxide thin films; film crystallinity; film deposition; filtered cathodic vacuum arc; ion energy; ionization ratio; macroparticle removal; quartz substrates; refractive index; temperature 293 K to 298 K; thermal annealing; Annealing;
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
DOI :
10.1109/IVESC.2010.5644198