Title :
Locally grown ZnO nanowires on MOSFET drain electrode and the effect of active control on field electron emission
Author :
Yang, Wenjiang ; She, J.C. ; Deng, S.Z. ; Jun Chen ; Xu, N.S.
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
Abstract :
In the present work, experiments have been carried out to study locally-grown ZnO nanowires on the drain-electrode of MOSFET by low-temperature solution-phase method and the effect of active control on field electron emission.
Keywords :
II-VI semiconductors; MOSFET; electron field emission; nanofabrication; nanowires; semiconductor growth; thin film transistors; wide band gap semiconductors; zinc compounds; 1D nanomaterials; MOSFET drain electrode; MOSFET-structured Si; Mo tip devices; ZnO; active control; active device; built-in MOSFET; field electron emission; field emission current; field emission properties; field emitter arrays; large area device fabrication limit; locally grown ZnO nanowires; low-temperature solution-phase method; microfabrication process; modern vacuum micro/nanodevices; nanomaterial preparation;
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
DOI :
10.1109/IVESC.2010.5644214
