DocumentCode :
3216460
Title :
A high-voltage output buffer fabricated on a 2 V CMOS technology
Author :
Clark, L.T.
Author_Institution :
Intel Corp., Chandler, AZ, USA
fYear :
1999
fDate :
17-19 June 1999
Firstpage :
61
Lastpage :
62
Abstract :
VLSI core voltages have scaled considerably below legacy I/O standards such as PCI which require tolerance of voltages between -1 V to over 6 V when power supply deviation and signal overshoot effects are considered. Circuit based dielectric protection has been demonstrated previously to address this problem for 3.3 V on a 2.5 V process. Gate oxide stress is dependent on the total stress time and magnitude of the stress over the life of the chip, which must be limited. Here, a 5 V PCI output buffer implemented on a standard 2 V process is presented which dynamically limits the DC stress to devices below 2.1 V and minimizes AC stress duration.
Keywords :
CMOS analogue integrated circuits; VLSI; buffer circuits; protection; -1 to 6 V; 2 V; 5 V; AC stress duration minimisation; CMOS technology; DC stress limitation; HV output buffer; PCI output buffer; circuit based dielectric protection; gate oxide stress; high-voltage output buffer; power supply deviation; signal overshoot effects; Atherosclerosis; CMOS technology; Dielectrics; Driver circuits; MOS devices; Power supplies; Protection; Rails; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-95-6
Type :
conf
DOI :
10.1109/VLSIC.1999.797236
Filename :
797236
Link To Document :
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