DocumentCode
3216875
Title
Simulation and analysis on the electron optics properties of tri-gate FED
Author
Liu, J.W. ; Deng, S.Z. ; Xu, N.S. ; Jun Chen
Author_Institution
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
fYear
2010
fDate
14-16 Oct. 2010
Firstpage
506
Lastpage
507
Abstract
Field emission displays (FEDs) have attracted much attention due to its advantages of high luminance, wide viewing angle, fast response and low power consumption. The structure is one of the key issues for the success of FED. Gate structure is widely used in FED for its outstanding advantages, such as lower driving voltage, higher resolution, controllable focusing and so on. In the present work, the electron optics properties of a tri-gate FED are studied.
Keywords
brightness; electron optics; field emission displays; low-power electronics; electron optics properties; field emission displays; gate structure; low power consumption; luminance; tri-gate FED; Educational institutions; Industries;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location
Nanjing
Print_ISBN
978-1-4244-6645-0
Type
conf
DOI
10.1109/IVESC.2010.5644233
Filename
5644233
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