Fabrication and magnetic properties of Fe/GaAs/Fe hybrid structures

Author

Wong, P.K.J. ; Zhang, Wensheng ; Wu, Junyong ; Will, I.G. ; Xu, Yong Bing ; Farrer, I. ; Ritchie, D.A.

Author_Institution

Dept. of Electron., Univ. of York, York, UK

fYear

2010

fDate

14-16 Oct. 2010

Firstpage

492

Lastpage

493

Abstract

In this contribution, experimental results on the fabrication and magnetic characterization of a novel type vertical Fe/GaAs(100)/Fe spin-valve (SV) spintronic device are presented. An array of techniques has been developed by combining use of ex-situ chemical and selective etching of GaAs/AlGaAs/n-GaAs epilayers and ultrahigh vacuum deposition of Fe by molecular beam epitaxy (MBE). The thinnest achievable GaAs membrane by these sequences can be as thin as 50 nm.

Keywords

III-V semiconductors; etching; gallium arsenide; iron; magnetic epitaxial layers; magnetoelectronics; metal-semiconductor-metal structures; molecular beam epitaxial growth; spin valves; vacuum deposition; Fe-GaAs-Fe; Fe-GaAs-Fe hybrid structures; GaAs membrane; GaAs/AlGaAs/n-GaAs epilayers; MBE; chemical etching; magnetic characterization; magnetic properties; molecular beam epitaxy; novel type vertical Fe-GaAs(100)-Fe spin-valve spintronic device; selective etching; ultrahigh vacuum deposition; Gallium arsenide; Iron;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International

Conference_Location

Nanjing

Print_ISBN

978-1-4244-6645-0

Type

conf

DOI

10.1109/IVESC.2010.5644243

Filename

5644243