• DocumentCode
    3217285
  • Title

    High power aluminum nitride RF vacuum window

  • Author

    Bartkowski, R.J. ; Pekrul, E. ; Kirshner, M.F.

  • Author_Institution
    L-3 Commun. Electron Devices, San Carlos, CA, USA
  • fYear
    2004
  • fDate
    27-29 April 2004
  • Firstpage
    42
  • Abstract
    Summary form only given. Aluminum nitride (AlN) is a leading candidate for replacing BeO or high-purity alumina as an RF window material because of its good mechanical and electrical properties. However, forming a vacuum tight AlN-to-metal seal has, until recently, proven difficult. Sienna Technologies has created a metallization technique to allow AlN to be used as a window ceramic and, jointly with L-3 Electron Devices, developed a braze process to hermetically seal the metallized AlN to copper. As an example, an S-band RF output window, suitable for incorporation into a high power microwave klystron, was designed by L-3 Electron Devices using CASCADE.
  • Keywords
    aluminium compounds; brazing; copper; hermetic seals; klystrons; metallisation; microwave materials; microwave tubes; AlN-Cu; RF window material; S-band RF output window; braze process; hermetic seal; high power RF vacuum window; high power microwave klystron; metallization technique; vacuum tight seal; window ceramic; Aluminum nitride; Ceramics; Copper; Electron devices; Hermetic seals; Klystrons; Mechanical factors; Metallization; Microwave devices; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electronics Conference, 2004. IVEC 2004. Fifth IEEE International
  • Print_ISBN
    0-7803-8261-7
  • Type

    conf

  • DOI
    10.1109/IVELEC.2004.1316188
  • Filename
    1316188