DocumentCode :
3217285
Title :
High power aluminum nitride RF vacuum window
Author :
Bartkowski, R.J. ; Pekrul, E. ; Kirshner, M.F.
Author_Institution :
L-3 Commun. Electron Devices, San Carlos, CA, USA
fYear :
2004
fDate :
27-29 April 2004
Firstpage :
42
Abstract :
Summary form only given. Aluminum nitride (AlN) is a leading candidate for replacing BeO or high-purity alumina as an RF window material because of its good mechanical and electrical properties. However, forming a vacuum tight AlN-to-metal seal has, until recently, proven difficult. Sienna Technologies has created a metallization technique to allow AlN to be used as a window ceramic and, jointly with L-3 Electron Devices, developed a braze process to hermetically seal the metallized AlN to copper. As an example, an S-band RF output window, suitable for incorporation into a high power microwave klystron, was designed by L-3 Electron Devices using CASCADE.
Keywords :
aluminium compounds; brazing; copper; hermetic seals; klystrons; metallisation; microwave materials; microwave tubes; AlN-Cu; RF window material; S-band RF output window; braze process; hermetic seal; high power RF vacuum window; high power microwave klystron; metallization technique; vacuum tight seal; window ceramic; Aluminum nitride; Ceramics; Copper; Electron devices; Hermetic seals; Klystrons; Mechanical factors; Metallization; Microwave devices; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electronics Conference, 2004. IVEC 2004. Fifth IEEE International
Print_ISBN :
0-7803-8261-7
Type :
conf
DOI :
10.1109/IVELEC.2004.1316188
Filename :
1316188
Link To Document :
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