• DocumentCode
    3217416
  • Title

    Improving photovoltaic properties by incorporating graphene into P30T/PCBM photovoltaic devices

  • Author

    Haiteng Wang ; Dawei He ; Yongsheng Wang

  • Author_Institution
    Key Lab. of Luminescence & Opt. Inf., Beijing Jiaotong Univ., Beijing, China
  • fYear
    2010
  • fDate
    14-16 Oct. 2010
  • Firstpage
    475
  • Lastpage
    476
  • Abstract
    Summary form only given. We report the optoelectronic properties occurring in solution-processable functionalized graphene(SPFGraphene)-PCBM/poly(3-octylthiophene)(P3OT) composites. The structural configuration of devices is ITO/PEDOT:PSS/P3OT:PCBM-SPFGraphene/LiF/Al. The best results were obtained with a P3OT/PCBM (1:1) mixture with 8wt% of SPFGraphene is open-circuit voltage (Voc) of 0.65V, a short-circuit current density (Jsc) of 4.2mA/cm2 and a FF of 0.35 which led to a power conversion efficiency of 0.95% at illumination at 100mW/cm2 AM 1.5. In the P3OT:PCBM-SPFGraphene composite, the SPFGraphene acted as exciton dissociation sites and provided the transport pathway of LUMO-graphene-Al. Doping of SPFGraphene into P3OT resulted in appropriate energetic distance between HOMO and LUMO of the donor/acceptor for a high open circuit voltage and provided higher exciton dissociation volume mobility of carrier transport for a large short-circuit current density.
  • Keywords
    current density; dissociation; excitons; filled polymers; graphene; photovoltaic effects; polymer blends; C; HOMO; LUMO-graphene-Al; P3OT-PCBM photovoltaic devices; carrier transport; energetic distance; exciton dissociation sites; exciton dissociation volume mobility; graphene doping; illumination; open-circuit voltage; optoelectronic properties; photovoltaic properties; power conversion efficiency; short-circuit current density; solution-processable functionalized graphene-PCBM/poly(3-octylthiophene) composites; structural configuration; transport pathway; voltage 0.65 V; Excitons; Indium tin oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
  • Conference_Location
    Nanjing
  • Print_ISBN
    978-1-4244-6645-0
  • Type

    conf

  • DOI
    10.1109/IVESC.2010.5644257
  • Filename
    5644257