DocumentCode :
3217762
Title :
Non-inductive impedance transformer
Author :
Subhani, Khaja F. ; DiBitonto, D. ; Pennington, T. ; Baier, Steven ; Stronczer, John
Author_Institution :
Alabama Univ., Tuscaloosa, AL, USA
fYear :
1993
fDate :
7-9 Mar 1993
Firstpage :
155
Lastpage :
158
Abstract :
An innovative design for a noninductive transformer circuit that transforms values of impedance less than 1 Ω to very high values of approximately several kΩ is based on GaAs CHIGFET technology, with intrinsic radiation hardness in excess of several hundred megarads. A principal advantage of the circuit is that the speed and bandwidth sensitivity is weakly affected by detector source capacity (up to 1 nF), thereby allowing greater design flexibility for both hadronic and electromagnetic calorimetry, or even charge particle detection (tracking) integrated within the same device. The simulated risetime is less than 2 ns, and power dissipated is less than 40 mW
Keywords :
CMOS analogue integrated circuits; CMOS integrated circuits; III-V semiconductors; VLSI; calorimetry; gallium arsenide; impedance convertors; integrated circuit modelling; particle detectors; preamplifiers; radiation hardening (electronics); CHIGFET technology; GaAs complementary heteroinsulated gate field effect transistor; charge particle detection; design flexibility; electromagnetic calorimetry; hadronic calorimetry; intrinsic radiation hardness; noninductive impedance transformer; Bandwidth; Calorimetry; Circuit simulation; Detectors; Electromagnetic devices; Electromagnetic radiation; Flexible printed circuits; Gallium arsenide; Impedance; Particle tracking;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
System Theory, 1993. Proceedings SSST '93., Twenty-Fifth Southeastern Symposium on
Conference_Location :
Tuscaloosa, AL
ISSN :
0094-2898
Print_ISBN :
0-8186-3560-6
Type :
conf
DOI :
10.1109/SSST.1993.522761
Filename :
522761
Link To Document :
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