Title :
A 2-32 GHz coplanar waveguide InAlAs-InGaAs-InP HBT cascode distributed amplifier
Author :
Kobayashi, K.W. ; Cowles, J. ; Tran, L. ; Block, T. ; Oki, A.K. ; Streit, D.C.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
A 2-32 GHz InAlAs-InGaAs-InP HBT CPW distributed amplifier (DA) has been demonstrated which benchmarks the highest bandwidth reported for an HBT DA. The DA combines a 100 GHz f/sub max/ and 60 GHz f/sub T/ HBT technology with a cascode coplanar waveguide DA topology to achieve this record bandwidth. The cascode CPW DA demonstrates both design techniques and technology capability which can be applied to more complex circuit functions such as active baluns for mixers, active combiners/dividers, and low DC power-broadband amplification at millimeter-wave frequencies.<>
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; bipolar MIMIC; bipolar MMIC; coplanar waveguides; distributed amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; wideband amplifiers; 2 to 32 GHz; 30 GHz; CPW; EHF; HBT cascode distributed amplifier; InAlAs-InGaAs-InP; MIMIC; MMIC; SHF; coplanar waveguide; Bandwidth; Coplanar waveguides; Distributed amplifiers; Frequency; Heterojunction bipolar transistors; Millimeter wave circuits; Millimeter wave technology; Performance gain; Space technology; Topology;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406062
