A 2-32 GHz coplanar waveguide InAlAs-InGaAs-InP HBT cascode distributed amplifier

Author

Kobayashi, K.W. ; Cowles, J. ; Tran, L. ; Block, T. ; Oki, A.K. ; Streit, D.C.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

215

Abstract

A 2-32 GHz InAlAs-InGaAs-InP HBT CPW distributed amplifier (DA) has been demonstrated which benchmarks the highest bandwidth reported for an HBT DA. The DA combines a 100 GHz f/sub max/ and 60 GHz f/sub T/ HBT technology with a cascode coplanar waveguide DA topology to achieve this record bandwidth. The cascode CPW DA demonstrates both design techniques and technology capability which can be applied to more complex circuit functions such as active baluns for mixers, active combiners/dividers, and low DC power-broadband amplification at millimeter-wave frequencies.<>

Keywords

III-V semiconductors; MMIC amplifiers; aluminium compounds; bipolar MIMIC; bipolar MMIC; coplanar waveguides; distributed amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; wideband amplifiers; 2 to 32 GHz; 30 GHz; CPW; EHF; HBT cascode distributed amplifier; InAlAs-InGaAs-InP; MIMIC; MMIC; SHF; coplanar waveguide; Bandwidth; Coplanar waveguides; Distributed amplifiers; Frequency; Heterojunction bipolar transistors; Millimeter wave circuits; Millimeter wave technology; Performance gain; Space technology; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406062

Filename

406062