Title :
Optimized calculation of the thickness of emission layer of NEA GaN semitransparent UV-photocathode
Author :
Yongfu Yang ; Rongguo Fu ; Debin Li ; Yijun Zhang ; Xiaohui Wang
Author_Institution :
Inst. of Electron. Eng. & Optoelectron. Technol., Nanjing Univ. of Sci. & Technol., Nanjing, China
Abstract :
The thickness of emission layer Te has the significant influence on quantum efficiency (QE) of NEA GaN semitransparent UV-photocathode. According to W.E.Spicer\´s photoemission "3-step model" theory, the whole process is described as photoelectron excitation, transportation from bulk to surface and escape to the vacuum by traversing surface barrier. The first two steps have taken place in emission layer.
Keywords :
III-V semiconductors; gallium compounds; photocathodes; photoemission; wide band gap semiconductors; 3-step model theory; emission layer thickness; optimized calculation; photoelectron excitation; photoemission; semitransparent UV-photocathode; surface barrier; Gallium nitride;
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
DOI :
10.1109/IVESC.2010.5644284
