DocumentCode
3218274
Title
Photoelectrochemical properties of multi-walled carbon nanotube assembled with CdSe quantum dots
Author
Chen, Jiann-Jong ; Lei, W. ; Zhang, X.B.
Author_Institution
Sch. of Electron. Sci. & Eng., Southeast Univ., Nanjing, China
fYear
2010
fDate
14-16 Oct. 2010
Firstpage
419
Lastpage
420
Abstract
This paper presents photoelectrochemical properties of multi-walled carbon nanotube assembled with CdSe quantum dots. CdSe QDs are adsorbed on the surface of MWCNTs with a diameter of 4-5 nm.
Keywords
II-VI semiconductors; adsorption; cadmium compounds; carbon nanotubes; current density; photoelectrochemistry; semiconductor quantum dots; wide band gap semiconductors; C; C-CdSe; adsorption; current density-voltage characteristics; multiwalled carbon nanotube; photoelectrochemical properties; quantum dots; size 4 nm to 5 nm;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location
Nanjing
Print_ISBN
978-1-4244-6645-0
Type
conf
DOI
10.1109/IVESC.2010.5644303
Filename
5644303
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