DocumentCode :
3218274
Title :
Photoelectrochemical properties of multi-walled carbon nanotube assembled with CdSe quantum dots
Author :
Chen, Jiann-Jong ; Lei, W. ; Zhang, X.B.
Author_Institution :
Sch. of Electron. Sci. & Eng., Southeast Univ., Nanjing, China
fYear :
2010
fDate :
14-16 Oct. 2010
Firstpage :
419
Lastpage :
420
Abstract :
This paper presents photoelectrochemical properties of multi-walled carbon nanotube assembled with CdSe quantum dots. CdSe QDs are adsorbed on the surface of MWCNTs with a diameter of 4-5 nm.
Keywords :
II-VI semiconductors; adsorption; cadmium compounds; carbon nanotubes; current density; photoelectrochemistry; semiconductor quantum dots; wide band gap semiconductors; C; C-CdSe; adsorption; current density-voltage characteristics; multiwalled carbon nanotube; photoelectrochemical properties; quantum dots; size 4 nm to 5 nm;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
Type :
conf
DOI :
10.1109/IVESC.2010.5644303
Filename :
5644303
Link To Document :
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