Title :
Study of structural and electronic properties of Cs adsorption on GaAs(100)−(2×4) surface
Author :
Hou, R.L. ; Chang, B.K. ; Zhang, B.H. ; Du, Y.J. ; Wang, Hong Guang
Author_Institution :
Sch. of Electron. Eng. & Optoelectron. Technol., Nanjing Univ. of Sci. & Technol., Nanjing, China
Abstract :
In this paper, the structural and electronic properties of Cs adsorption on GaAs surface were studied. The samples were prepared by MBE. The conduction bands, valence bands, band structure and density of states were calculated by first principles based on density functional theory. The effect of Zn doping on electronic structure were also analyzed.
Keywords :
III-V semiconductors; ab initio calculations; adsorption; caesium; conduction bands; density functional theory; doping profiles; electronic density of states; gallium arsenide; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; valence bands; zinc; Cs; GaAs:Zn; MBE; adsorption; band structure; conduction bands; density functional theory; density of states; doping; electronic properties; electronic structure; first principles calculation; structural properties; valence bands; Gallium arsenide; Irrigation;
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
DOI :
10.1109/IVESC.2010.5644308
