DocumentCode
3218376
Title
Study of structural and electronic properties of Cs adsorption on GaAs(100)−(2×4) surface
Author
Hou, R.L. ; Chang, B.K. ; Zhang, B.H. ; Du, Y.J. ; Wang, Hong Guang
Author_Institution
Sch. of Electron. Eng. & Optoelectron. Technol., Nanjing Univ. of Sci. & Technol., Nanjing, China
fYear
2010
fDate
14-16 Oct. 2010
Firstpage
230
Lastpage
231
Abstract
In this paper, the structural and electronic properties of Cs adsorption on GaAs surface were studied. The samples were prepared by MBE. The conduction bands, valence bands, band structure and density of states were calculated by first principles based on density functional theory. The effect of Zn doping on electronic structure were also analyzed.
Keywords
III-V semiconductors; ab initio calculations; adsorption; caesium; conduction bands; density functional theory; doping profiles; electronic density of states; gallium arsenide; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; valence bands; zinc; Cs; GaAs:Zn; MBE; adsorption; band structure; conduction bands; density functional theory; density of states; doping; electronic properties; electronic structure; first principles calculation; structural properties; valence bands; Gallium arsenide; Irrigation;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location
Nanjing
Print_ISBN
978-1-4244-6645-0
Type
conf
DOI
10.1109/IVESC.2010.5644308
Filename
5644308
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