Title :
A 9-16 GHz monolithic HEMT low noise amplifier with embedded limiters
Author :
Huang, Pei-Yu ; Jones, W. Linwood ; Oki, Aaron ; Streit, Dwight ; Yamasaki, W. ; Liu, Peng ; Bui, S. ; Nelson, B.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
A novel 9-16 GHz monolithic HEMT low noise amplifier with on-chip limiters has been designed, fabricated, and measured. This paper presents the design topology, the new fabrication technology, and the on-wafer measurements of this circuit. The limiter consists of one PIN diode and one Schottky diode. The low noise amplifier itself is a single stage balanced amplifier with one limiter embedded in each single-ended amplifier.<>
Keywords :
HEMT integrated circuits; MMIC amplifiers; Schottky diodes; differential amplifiers; integrated circuit design; integrated circuit measurement; integrated circuit noise; microwave limiters; p-i-n diodes; 9 to 16 GHz; HEMT low noise amplifier; MMIC amplifiers; PIN diode; Schottky diode; design topology; embedded limiters; fabrication technology; on-wafer measurements; single stage balanced amplifier; single-ended amplifier; Circuit noise; Fabrication; HEMTs; Insertion loss; Low-noise amplifiers; MMICs; Noise figure; Noise measurement; Radiofrequency amplifiers; Schottky diodes;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406065
