DocumentCode :
3218487
Title :
Study of quantum yield for transmission-mode GaN photocathodes
Author :
Wang, X.H. ; Chang, B.K. ; Qian, Y.S. ; Zhang, Y.J. ; Du, X.Q. ; Gao, Peng ; Guo, X.Y.
Author_Institution :
Inst. of Electron. Eng. & Optoelectron. Technol., Nanjing Univ. of Sci. & Technol., Nanjing, China
fYear :
2010
fDate :
14-16 Oct. 2010
Firstpage :
232
Lastpage :
233
Abstract :
In this paper transmission-mode GaN photocathodes was activated by Cs/O, its quantum efficiency curve and the factors which influenced the quantum efficiency mostly were studied. Transmission-mode GaN photocathodes was grown by Metal-Organic Chemical Vapor Deposition (MOCVD).
Keywords :
III-V semiconductors; MOCVD; gallium compounds; photocathodes; wide band gap semiconductors; Al2O3; Al2O3-AlN; GaN; metal-organic chemical vapor deposition; quantum efficiency curve; quantum yield; transmission-mode photocathodes; Gallium nitride;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
Type :
conf
DOI :
10.1109/IVESC.2010.5644313
Filename :
5644313
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3218487
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