Title :
A low power 10 Gbps voltage mode output driver with good return loss performance
Author :
Abugharbieh, Khaldoon ; Krishnan, Shoba ; Mohan, Jitendra ; Varadarajan, Devnath
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
This paper describes a new topology and implementation of a 10 Gbps voltage mode output driver designed for high speed data transfer applications. Using a positive feedback technique, the low power driver achieves the proper internal chip impedance required for matching the line impedance. As a result, return loss is minimized and good signal integrity is achieved. The driver, which consists of a pre-driver and an output stage, consumes a total of 17mW at speed power and S22 return loss performance better than -15dB. It provides a single ended output swing of 400mV. In measurements, the driver, which was a part of an equalizer chip, achieved peak to peak jitter of 11psec at 10Gbps. The chip is fabricated in a standard 2.5V/1.2V SiGe BiCMOS technology with 100 GHz peak ft, and packaged in a commercial LLP package.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; circuit feedback; driver circuits; equalisers; impedance matching; jitter; low-power electronics; BiCMOS; SiGe; equalizer chip; high speed data transfer; internal chip impedance; line impedance matching; low power driver; peak-to-peak jitter; positive feedback; power 17 mW; return loss; signal integrity; topology; voltage 400 mV; voltage mode output driver; Equalizers; Feedback; Impedance; Jitter; Packaging; Performance loss; Semiconductor device measurement; Silicon germanium; Topology; Voltage; impedance matching; low power; low voltage differential signaling; output drivers; return loss;
Conference_Titel :
Microelectronics, 2008. ICM 2008. International Conference on
Conference_Location :
Sharjah
Print_ISBN :
978-1-4244-2369-9
Electronic_ISBN :
978-1-4244-2370-5
DOI :
10.1109/ICM.2008.5393764