DocumentCode :
3218506
Title :
Comparative research on electron diffusion length for GaAs photocathodes
Author :
Chen Liang
Author_Institution :
Inst. of Electron. Eng. & Optoelectron. Technol., Nanjing Univ. of Sci. & Technol., Nanjing, China
fYear :
2010
fDate :
14-16 Oct. 2010
Firstpage :
226
Lastpage :
227
Abstract :
The feasibility of measuring the electron diffusion length of photocathodes by surface photovoltage spectroscopy from theory and deduce the calculation formulas. The principle of the surface photovoltage spectroscopy method and the measuring technique are discussed particularly using the electro-static equilibrium condition and the law of conservation of charge on the basis of the energy band structure of semiconductor. The measurement of spectrum respond wave after activiation and surface photovoltage spectroscopy are shown. The difference between the two curves and the diffusion length fitted by the two curves are discussed. Thus the development of closed-loop research for GaAs photocathodes through surface photovoltage spectroscopy before activation and spectrum respond wave after activation are developed.
Keywords :
III-V semiconductors; band structure; carrier lifetime; gallium arsenide; photocathodes; photoelectron spectra; GaAs; electro-static equilibrium condition; electron diffusion length; energy band structure; photocathodes; surface photovoltage spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
Type :
conf
DOI :
10.1109/IVESC.2010.5644314
Filename :
5644314
Link To Document :
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