Title :
Study on depuration technics for negative electron affinity GaN photocathode
Author :
Qiao, J.L. ; Chang, B.K. ; Qian, Y.S. ; Li, Bing ; Wang, X.H. ; Gao, Peng
Author_Institution :
Sch. of Electron. Eng. & Optoelectron. Tech., Nanjing Univ. of Sci. & Technol., Nanjing, China
Abstract :
The traditional corrosion methods based on oxidizing and dissolving can´t remove oxygen (O) and carbon (C) on GaN effectively. This is because GaN has stronger chemical stability, the strong oxidation chemical reagent like H2O2 can´t oxidize GaN surface. In addition the oxide on GaN surface can´t be dissolved effectively by the strong acid solution such as HCl or H2SO4. The depuration method for GaN photocathode was studied by using NEA photocathode activation system and XPS surface analysis system in this paper.
Keywords :
III-V semiconductors; X-ray photoelectron spectra; electron affinity; gallium compounds; oxidation; photocathodes; surface treatment; wide band gap semiconductors; GaN; GaN surface oxidation; HCl solution; NEA photocathode activation system; XPS surface analysis system; chemical stability; depuration method; depuration technics; dissolving; negative electron affinity GaN photocathode; oxidation chemical reagent; sulfuric acid solution; traditional corrosion methods; Cathodes; Gallium nitride; Heating;
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
DOI :
10.1109/IVESC.2010.5644317
