DocumentCode
3218627
Title
Steady-state and transient temperature distribution in GaAs microwave circuits
Author
Krishnamoorthy, Shriram ; Chowdhury, Masud H.
Author_Institution
Electr. & Comput. Eng., Univ. of Illinois at Chicago, Chicago, IL, USA
fYear
2008
fDate
14-17 Dec. 2008
Firstpage
114
Lastpage
117
Abstract
This work models and simulates the electrothermal properties of GaAs pHEMT based Monolithic Microwave Integrated Circuits (MMIC). The temperature increase of each component due to the self heating of the power devices in the packages was simulated coupled with the static electromagnetic analysis. A linear RC thermal macromodel was developed for the die, and the temperatures are solved by using nodal equations numerically. Stead-state and transient simulations of temperature distribution of the MMIC structures were performed. The need for thermal vias was demonstrated as essential parts of the package for thermal cooling purposes.
Keywords
III-V semiconductors; MMIC; gallium arsenide; integrated circuit packaging; power HEMT; temperature distribution; thermal management (packaging); GaAs; MMIC structures; electrothermal properties; linear RC thermal macromodel; microwave circuits; monolithic microwave integrated circuits; nodal equations; pHEMT; packages; power devices; self heating; static electromagnetic analysis; steady-state distribution; thermal cooling; thermal vias; transient temperature distribution; Circuit simulation; Electromagnetic heating; Electromagnetic transients; Gallium arsenide; Integrated circuit modeling; MMICs; Microwave circuits; Microwave devices; Steady-state; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2008. ICM 2008. International Conference on
Conference_Location
Sharjah
Print_ISBN
978-1-4244-2369-9
Electronic_ISBN
978-1-4244-2370-5
Type
conf
DOI
10.1109/ICM.2008.5393770
Filename
5393770
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