DocumentCode :
3218627
Title :
Steady-state and transient temperature distribution in GaAs microwave circuits
Author :
Krishnamoorthy, Shriram ; Chowdhury, Masud H.
Author_Institution :
Electr. & Comput. Eng., Univ. of Illinois at Chicago, Chicago, IL, USA
fYear :
2008
fDate :
14-17 Dec. 2008
Firstpage :
114
Lastpage :
117
Abstract :
This work models and simulates the electrothermal properties of GaAs pHEMT based Monolithic Microwave Integrated Circuits (MMIC). The temperature increase of each component due to the self heating of the power devices in the packages was simulated coupled with the static electromagnetic analysis. A linear RC thermal macromodel was developed for the die, and the temperatures are solved by using nodal equations numerically. Stead-state and transient simulations of temperature distribution of the MMIC structures were performed. The need for thermal vias was demonstrated as essential parts of the package for thermal cooling purposes.
Keywords :
III-V semiconductors; MMIC; gallium arsenide; integrated circuit packaging; power HEMT; temperature distribution; thermal management (packaging); GaAs; MMIC structures; electrothermal properties; linear RC thermal macromodel; microwave circuits; monolithic microwave integrated circuits; nodal equations; pHEMT; packages; power devices; self heating; static electromagnetic analysis; steady-state distribution; thermal cooling; thermal vias; transient temperature distribution; Circuit simulation; Electromagnetic heating; Electromagnetic transients; Gallium arsenide; Integrated circuit modeling; MMICs; Microwave circuits; Microwave devices; Steady-state; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2008. ICM 2008. International Conference on
Conference_Location :
Sharjah
Print_ISBN :
978-1-4244-2369-9
Electronic_ISBN :
978-1-4244-2370-5
Type :
conf
DOI :
10.1109/ICM.2008.5393770
Filename :
5393770
Link To Document :
بازگشت