Title :
Research of NEA GaN photocathode performance parameters on the effect of quantum efficiency
Author :
Yujie Du ; Benkang Chang ; Xiaoqian Fu ; Biao Li ; Junju Zhang
Author_Institution :
Inst. of Electron. Eng. & Opto-Electr. Technol., NJUST, Nanjing, China
Abstract :
Research of negative electron affinity GaN ultraviolet photocathode performance parameters on the effect of quantum efficiency is reported. Electronic surface escaping probability is one of the important parameters in comprehensive measure the level of the preparation of GaN optoelectronic cathode.
Keywords :
III-V semiconductors; electron emission; gallium compounds; photocathodes; photodetectors; ultraviolet detectors; wide band gap semiconductors; GaN; electronic surface emission; negative electron affinity; quantum efficiency; ultraviolet optoelectronic photocathode; ultraviolet signal detector; Gallium nitride;
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
DOI :
10.1109/IVESC.2010.5644324
