Title :
Stress modelling of microstructures
Author_Institution :
USITT, Southampton Univ., UK
Abstract :
This paper introduces the use of Finite Element Modelling (FEM) techniques to simulate the performance of silicon resonators and the influence of basic sensor packages. Given the expense incurred and time required to develop prototype silicon sensors such techniques are becoming increasingly important
Keywords :
microsensors; Si; finite element model; microstructure; sensor package; silicon resonator; simulation; stress;
Conference_Titel :
Computer Modelling Techniques for Microstructures (Digest No: 1997/077), IEE Half-Day Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19970441
