• DocumentCode
    3218709
  • Title

    Cs´ effect on the stability of GaAs photocahode

  • Author

    Zhang, J.J. ; Zhang, Y.J. ; Niu, Jianwei ; Du, Y.J. ; Li, Bing ; Chang, B.K.

  • Author_Institution
    Sch. of Electron. Eng. & Optoelectron. Tech., Nanjing Univ. of Sci. & Technol., Nanjing, China
  • fYear
    2010
  • fDate
    14-16 Oct. 2010
  • Firstpage
    223
  • Lastpage
    225
  • Abstract
    In this paper, two comparative experiments have been carried out to study Cs´ effect on the stability of GaAs photocathode. Experiments show that Cs of a certain concentration helps extend the life of photocathode, and the decay of photocathode is not caused by Cs desorption but oxide adsorption.
  • Keywords
    III-V semiconductors; adsorption; caesium; gallium arsenide; photocathodes; Cs effects; GaAs-Cs; desorption; oxide adsorption; photocathode stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
  • Conference_Location
    Nanjing
  • Print_ISBN
    978-1-4244-6645-0
  • Type

    conf

  • DOI
    10.1109/IVESC.2010.5644325
  • Filename
    5644325
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3218709