DocumentCode :
3218881
Title :
Trimming Epitaxial GaAs Schottky-diode Parameters Via Anodic Oxidation
Author :
Siegel, Clifford M. ; Mattauch, Robert J.
Author_Institution :
University Of Virginia
fYear :
1981
fDate :
5-8 April 1981
Firstpage :
392
Lastpage :
394
Keywords :
Capacitance; Charge carrier density; Epitaxial layers; Frequency; Gallium arsenide; Laboratories; Local oscillators; Oxidation; Schottky diodes; Semiconductor diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Southeastcon '81. Conference Proceedings
Conference_Location :
Huntsville, AL, USA
Type :
conf
DOI :
10.1109/SECON.1981.673472
Filename :
673472
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3218881
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