Title :
Fundamentals of Next Generation Compact MOSFET Models
Author :
Galup-Montoro, C. ; Schneider, Márcio C. ; Pahim, Viriato C.
Author_Institution :
carlos@eel.ufsc.br
Abstract :
It has recently become clear that the electronics industry is turning away from source-referenced, threshold voltage based MOSFET models. The two main approaches as candidates to replace BSIM-type models are inversion-charge and surface-potential models. This paper provides an overview of the basic physics that must be modeled to build a compact model for the MOSFET and compares the two approaches taken by the developers of next generation models.
Keywords :
Circuit simulation; Digital circuits; Electronics industry; Integrated circuit modeling; Integrated circuit synthesis; MOSFET circuits; Permission; Physics; Threshold voltage; Turning; Design; MOSFET model; Performance; compact model; inversion-charge model; surface potential model;
Conference_Titel :
Integrated Circuits and Systems Design, 18th Symposium on
Print_ISBN :
1-59593-174-0
DOI :
10.1109/SBCCI.2005.4286828
