Title :
Low voltage, low power CMOS front-end for Bluetooth applications
Author :
Kassem, Omar H. ; Mahmoud, Soliman A.
Author_Institution :
Electron. & Electr. Eng. Dept., German Univ. in Cairo, Cairo, Egypt
Abstract :
A Q-enhanced L C filter, implemented before, is investigated with some enhancements and small changes; trying to remove the off-chip filter needed before the low noise amplifier in a front-end receiver. The proposed Q-enhanced filter delivers about 25.4 dB of voltage gain, 3.4 dB noise figure, 1-dB compression point dynamic range of 144 dB.Hz, 28 MHz of 3-dB bandwidth and operating at 2.55 G Hz as a centre frequency, while drawing 4.7 mA from a 3 V supply, when using 0.25 ¿m technology, trying to meet the Bluetooth system specifications.
Keywords :
Bluetooth; CMOS integrated circuits; UHF filters; UHF integrated circuits; active filters; operational amplifiers; radio receivers; Bluetooth application; Q-enhanced LC filter; active filters; bandpass filters; current 4.7 mA; frequency 2.55 GHz; front end receiver; gain 25.4 dB; low power CMOS front end; noise figure 3.4 dB; size 0.25 mum; voltage 3 V; Band pass filters; Bandwidth; Bluetooth; Dynamic range; Frequency; Low voltage; MOSFETs; Noise figure; Q factor; Transceivers; Active filters; Bandpass filters; L C filters; Q-enhanced filter; full integration;
Conference_Titel :
Microelectronics, 2008. ICM 2008. International Conference on
Conference_Location :
Sharjah
Print_ISBN :
978-1-4244-2369-9
Electronic_ISBN :
978-1-4244-2370-5
DOI :
10.1109/ICM.2008.5393799
