Dual-standard BiCMOS LNA for DCS1800/W-CDMA Applications

Author

Moreira, C.P. ; Kerherve, E. ; Jarry, P. ; Belot, D.

Author_Institution

IXL Lab., Bordeaux Univ.

fYear

2005

fDate

4-7 Sept. 2005

Firstpage

133

Lastpage

137

Abstract

We present in this article guidelines to design a dual-standard dual-mode low-noise amplifier (LNA) for DCS1800/W-CDMA applications. In order to save die area compared to conventional parallel LNAs, we have used an alternative circuit configuration. It consists of sharing the most die consuming elements (inductances) in both operation standards, enabling a more compact solution. The mode and standard selection is performed through a bias scheme (MOS switches) that allows alternating between the two involved standards. Good performances in terms of gain (S21 > 14.6dB), noise figure (NF ap 1.1dB) and input impedance matching (S11 < -26dB) were obtained. This was due mainly to the use of appropriated design and optimization techniques. The proposed dual-standard dual-mode LNA consumes 6.8mW under 1.8V supply voltage, in both standards

Keywords

BiCMOS integrated circuits; code division multiple access; impedance matching; integrated circuit design; low noise amplifiers; 1.8 V; 6.8 mW; DCS1800/W-CDMA applications; MOS switch; bias scheme; dual-mode low-noise amplifier; dual-standard BiCMOS LNA; impedance matching; noise input impedance optimization; very large scale integration; BiCMOS integrated circuits; Design optimization; Guidelines; Impedance matching; Low-noise amplifiers; Multiaccess communication; Noise figure; Noise measurement; Performance gain; Switches; BiCMOS; Design; Low-noise amplifier; Performance; Theory; dual-standard dual-mode operation; noise/input impedance optimization methodology;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits and Systems Design, 18th Symposium on

Conference_Location

Florianopolis

Print_ISBN

1-59593-174-0

Type

conf

DOI

10.1109/SBCCI.2005.4286845

Filename

4286845