Title :
Blanket and pocket anti punchthrough device design approaches in 0.35-μm CMOS technology development
Author :
Hussin, Mohd Rofei Mat ; Saari, Shahrul Aman Mohd ; Rahim, Ahmad Ismat Abdul ; Ayub, Ramzan Mat ; Ahmad, Mohd Rais
Author_Institution :
Microelectron. Lab., MIMOS Bhd, Kuala Lumpur, Malaysia
Abstract :
Short channel devices suffer from punchthrough leakage due to barrier lowering induced by drain bias (DIBL). The device engineering strategy aims at reducing leakage from surface, sub-surface and bulk current paths. In deep sub-micron devices, bulk punchthrough is the major contributor to the DIBL leakage. This paper describes process optimization that requires some trade-offs between device parameters such as off-state current leakage, drive current and threshold voltage, to meet technology specifications. In this work we optimize well, channel, pocket and drain implant and anneal parameters to achieve the desired device characteristics
Keywords :
CMOS integrated circuits; annealing; circuit optimisation; doping profiles; integrated circuit design; integrated circuit testing; ion implantation; leakage currents; 0.35 mum; CMOS technology development; DIBL; DIBL leakage; barrier lowering; blanket anti punchthrough device design; bulk current path leakage; bulk punchthrough; channel anneal; channel implant; device characteristics; device engineering strategy; device parameters; drain anneal; drain bias; drain implant; drive current; off-state current leakage; pocket anneal; pocket anti punchthrough device design; pocket implant; process optimization; process parameters optimization; punchthrough leakage; short channel devices; sub-surface current path leakage; surface current path leakage; technology specifications; threshold voltage; well anneal; well implant; Annealing; Boron; CMOS technology; Electrodes; Implants; Isolation technology; Leakage current; MOS devices; MOSFETs; Threshold voltage;
Conference_Titel :
Semiconductor Electronics, 2000. Proceedings. ICSE 2000. IEEE International Conference on
Conference_Location :
Guoman Port Dickson Resort
Print_ISBN :
0-7803-6430-9
DOI :
10.1109/SMELEC.2000.932304