DocumentCode
321976
Title
Determination of semiconductor properties through Hall-effect measurement with contactless microwave techniques
Author
Xinqing Sheng ; Shanjia Xu
Author_Institution
Dept. of Electron. Eng. & Inf Sci., Univ. of Sci. & Technol. of China, Hefei, China
fYear
1996
fDate
5-5 Dec. 1996
Firstpage
105
Lastpage
108
Abstract
The scattering characteristics of semiconductors with tensor conductivity resulting from the Hall-effect are analyzed with 3-D edge-element to determine the properties of the semiconductor. Some useful curves are given and the procedure of determining the mobility and the carrier concentration of II-VI semiconductor with these curves is described.
Keywords
Hall effect; II-VI semiconductors; carrier density; carrier mobility; electrical conductivity; finite element analysis; microwave measurement; 3D edge-element; Hall-effect measurement; II-VI semiconductor; carrier concentration; carrier mobility; contactless microwave techniques; scattering characteristics; tensor conductivity; Conductivity; Dielectric losses; Dielectric substrates; Electromagnetic scattering; Magnetic analysis; Magnetic field measurement; Microwave measurements; Microwave theory and techniques; Particle scattering; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Photonics, 1996. MWP '96. Technical Digest., 1996 Internatonal Topical Meeting on
Conference_Location
Kyoto, Japan
Print_ISBN
0-7803-3129-X
Type
conf
DOI
10.1109/MWP.1996.662078
Filename
662078
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