Title :
Electrical study of NiFe/Al2O3/Si tunnel diodes for magnetic memories
Author :
Benabderrahmane, Rabia ; Kanoun, Mehdi ; Bruyant, Nicolas ; Achard, Herve ; Baraduc, Claire ; Bsiesy, Ahmad
Author_Institution :
SPINTEC\\INAC, CEA/CNRS, Grenoble, France
Abstract :
This work is focused on the electrical characterization of NiFe/Al2O3/Si tunnel diodes that can be used for spin injection into silicon. The effect of annealing on the electrical properties of the diodes has been studied by the analysis of the capacitance-voltage characteristics. This analysis shows that the Al2O3 densification annealing can largely decrease the Al2O3/Si interface state density bringing it to the state of the art values. Current-Voltage analysis shows a direct tunneling mechanism of transport through 2 nm alumina barrier. This result shows that Al2O3 has all the prerequisites to be used as a tunnel barrier for coherent spin injection into silicon.
Keywords :
alumina; annealing; densification; elemental semiconductors; ferromagnetic materials; iron alloys; magnetic storage; magnetoelectronics; nickel alloys; silicon; spin polarised transport; tunnel diodes; NiFe-Al2O3-Si; alumina barrier; capacitance-voltage characteristics; coherent spin injection; current-voltage analysis; densification annealing; electrical characterization; interface state density; magnetic memory; size 2 nm; tunnel barrier; tunnel diodes; Aluminum oxide; Annealing; CMOS technology; Dielectrics; Random access memory; Schottky diodes; Semiconductor diodes; Silicon; Spin polarized transport; Temperature; MRAM; annealing; direct tunnelling model; interface defects; spintronics;
Conference_Titel :
Microelectronics, 2008. ICM 2008. International Conference on
Conference_Location :
Sharjah
Print_ISBN :
978-1-4244-2369-9
Electronic_ISBN :
978-1-4244-2370-5
DOI :
10.1109/ICM.2008.5393832
