• DocumentCode
    3219784
  • Title

    Modelling of electronic nanostructures

  • Author

    Bouillaut, F.

  • Author_Institution
    Lab. de Genie Electr. de Paris
  • fYear
    1997
  • fDate
    35445
  • Firstpage
    42461
  • Lastpage
    42463
  • Abstract
    The rapid development and miniaturization of devices necessitate the resolution of Schrodinger-Poisson equations to provide an accurate description of the carrier confinement in heterojunction devices. We have solved Schrodinger´s and Poisson´s equations iteratively using a nodal finite element formulation. This formulation allows us to obtain the quantified electron energy states using the real device geometry
  • Keywords
    nanotechnology; Poisson equation; Schrodinger equation; carrier confinement; electron energy states; electronic nanostructure; finite element model; heterojunction device;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Computer Methods for Material Modelling in Elecgtromagnetics (Digest No: 1997/067), IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:19970362
  • Filename
    643846
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3219784