DocumentCode
321982
Title
Frequency response of time-varying photocapacitance of an InP:Fe MIS capacitor
Author
Chakrabarti, P. ; Madheswaran, M.
Author_Institution
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
fYear
1996
fDate
5-5 Dec. 1996
Firstpage
133
Lastpage
136
Abstract
In this paper the effect of intensity modulated illumination on the photocapacitance of an InP metal-insulator-semiconductor (MIS) structure has been reported. A theoretical model of the device has been developed and the results obtained on the basis of the model have been presented for determining the dependence of the time-varying photocapacitance of the device on the frequency of the signal modulating the intensity of incident illumination.
Keywords
III-V semiconductors; MIS capacitors; frequency response; indium compounds; iron; photocapacitance; photodetectors; InP:Fe; MIS capacitor; frequency response; intensity modulated illumination; time-varying photocapacitance; Capacitors; Frequency response; Indium phosphide; Infrared detectors; Integrated optics; Intensity modulation; Lighting; Optical control; Optical devices; Optical modulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Photonics, 1996. MWP '96. Technical Digest., 1996 Internatonal Topical Meeting on
Conference_Location
Kyoto, Japan
Print_ISBN
0-7803-3129-X
Type
conf
DOI
10.1109/MWP.1996.662086
Filename
662086
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