Title :
Subband-resonance oscillations in photoexcited GaAs-AlAs type-II superlattices
Author :
Mimura, H. ; Hosoda, M. ; Ohtani, N. ; Grahn, H.T. ; Yokoo, K.
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
Subband-resonance oscillations have been observed in photoexcited, undoped type-II GaAsAlAs superlattices. The frequency can be tuned over a wide range either by the applied voltage or the photoexcited carrier density. The oscillations are due to an oscillating domain boundary between two electric-field domains.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; current fluctuations; gallium arsenide; photoconductivity; semiconductor superlattices; space-charge-limited conduction; GaAs-AlAs; electric-field domains; oscillating domain boundary; photoexcited carrier density; photoexcited type-II superlattices; subband-resonance oscillations; Adaptive optics; Charge carrier density; Frequency; Optical superlattices; Photoconductivity; Radiative recombination; Resonance; Semiconductor superlattices; Tuning; Voltage;
Conference_Titel :
Microwave Photonics, 1996. MWP '96. Technical Digest., 1996 Internatonal Topical Meeting on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-3129-X
DOI :
10.1109/MWP.1996.662087
