DocumentCode :
3219908
Title :
Design of two-stage MOSFET-only operational amplifiers
Author :
Aminzadeh, Hamed ; Danaie, Mohammad
Author_Institution :
EE Dept., Ferdowsi Univ. of Mashhad, Mashhad, Iran
fYear :
2008
fDate :
14-17 Dec. 2008
Firstpage :
35
Lastpage :
38
Abstract :
In this work, the gate-to-bulk capacitance property of MOS transistors is employed to design high-speed two-stage operational amplifiers (opamp). Traditional design of two-stage opamps recommends MIM or PIP capacitors to avoid instability in closed-loop applications. In addition to area efficiency achieved by replacing these capacitors with MOS transistors, the integration of the opamp would become compatible with standard digital CMOS technologies. Circuit-level simulation compares two opamps that are designed to be employed in a 50MS/s switched-capacitor sample-and-hold circuit. For the same specifications in 0.18¿m CMOS technology, the proposed MOSFET-only opamp is about 52% smaller than a conventionally design when neglecting the signal path capacitors.
Keywords :
CMOS digital integrated circuits; MIM devices; MOSFET; circuit simulation; operational amplifiers; sample and hold circuits; switched capacitor networks; MIM capacitor; MOS transistor; MOSFET; PIP capacitor; area efficiency; circuit-level simulation; closed-loop application; digital CMOS technology; gate-to-bulk capacitance property; operational amplifier; size 0.18 mum; switched-capacitor sample-and-hold circuit; two-stage opamps; CMOS technology; Capacitance; Frequency; Integrated circuit technology; MIM capacitors; MOS capacitors; MOSFETs; Microelectronics; Operational amplifiers; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2008. ICM 2008. International Conference on
Conference_Location :
Sharjah
Print_ISBN :
978-1-4244-2369-9
Electronic_ISBN :
978-1-4244-2370-5
Type :
conf
DOI :
10.1109/ICM.2008.5393841
Filename :
5393841
Link To Document :
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