Silicon carbide power devices for high temperature, high power density switching applications

Silicon carbide (SiC) has been attracting much attention because of its potential application to high performance power devices with the capability of operating at high temperature. Here, the authors briefly describe SiC´s advantages for high pulsed power devices, review the state-of the-art in prototype SiC power device performance and present simulation results and thermal calculations which predict the capability of SiC thyristors in high-power pulse applications