Discrete states of carrier traps and electrical conduction mechanism in organic substances

Author

Maeta, Shigeyoshi ; Yasue, Youichi ; Yoshida, Fukuzo

Author_Institution

Dept. of Electr. Eng., Osaka Inst. of Technol., Japan

fYear

1992

fDate

22-25 Jun 1992

Firstpage

42

Lastpage

46

Abstract

A theory for the thermally stimulated current (TSC) curve of the first order based on the concept of `the fundamental element´ is discussed. Accurate autoseparation of experimental data is made possible by utilizing the theory. As each curve involved in the data can be determined accurately, three intrinsic parameters of the carrier-trap state, i.e. energy depth, escape frequency factor, and trapped carrier density, can be evaluated simultaneously. The theory was applied to composite experimental TSC data for a purified anthracene single crystal

Keywords

electron traps; organic compounds; organic semiconductors; thermally stimulated currents; TSC curve; carrier-trap state; discrete states; electrical conduction mechanism; energy depth; escape frequency factor; first order theory; fundamental element; organic substances; purified anthracene single crystal; trapped carrier density; Character recognition; Charge carrier density; Electron traps; Frequency estimation; Genetic expression; Gravity; Organic materials; Resistance heating; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Conduction and Breakdown in Solid Dielectrics, 1992., Proceedings of the 4th International Conference on

Conference_Location

Sestri Levante

Print_ISBN

0-7803-0129-3

Type

conf

DOI

10.1109/ICSD.1992.224957

Filename

224957