Capture Cross Section of Traps Causing Random Telegraph Noise in Gate-Induced Drain Leakage Current

In this brief, we investigated random telegraph noise (RTN) in the gate-induced drain leakage (GIDL) current of a MOSFET. Using the resulting RTN measurement data, the capture cross section (σc) of the trap was extracted, and a more accurate σc model was introduced. The bias dependence of σc was then analyzed.